Psiloquest Inc.

Edward M Yokley

Yaw S Obeng

Kathleen Richardson

The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.

Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor

The present invention is directed to a method for preparing a polymer for chemical mechanical polishing of a semiconductor substrate. The method comprises providing a thermoplastic foam substrate and exposing the substrate to an initial plasma reactant to produce a modified surface thereon. The method also includes exposing the modified surface to a secondary plasma reactant to create a grafted surface on the modified surface. An electrode temperature is maintained between about 20&deg; C. and about 100&deg; C. during the exposures of the substrate and the modified surface.

Method for preparing a polymer for chemical mechanical polishing

The present invention is directed, in general, to a method of planarizing a surface on a semiconductor wafer and, more specifically, to a method of altering the properties of polishing pads to improve thermal management during chemical-mechanical planarization, the resulting heat conductive pad and a polishing apparatus that includes the pad. The pad includes a polishing body composed of a thermoconductive polymer comprising an substrate and filler particle containing a Group II salt and within the substrate.

Thermal management with filled polymeric polishing pads and applications therefor

The present invention is directed, in general, to packaged polishing pads for chemical mechanical polishing of semiconductor wafers and integrated circuits. More specifically, the invention is directed to a method of preparing and packing the pad and the packaging therefor. Prior to placing the pad on a platen and polishing with the pad, a polishing pad having an hygroscopic absorbency is soaked with an aqueous media for a time sufficient to equilibrate the pad. The pad maybe packaged by placement in a sealable moisture tight package after soaking or before soaking along with a sufficient quantity of aqueous media to allow the pad to equilibrate.

Polishing pad composition and method of use

To address the deficiencies of the prior art, the present invention provides a polishing pad comprising a thermoplastic polymer and a method of manufacturing therefor. More specifically, the present invention polishing pad fabricated from an extruded amorphous thermoplastic and free of a gate vestige. The invention also provides a method of manufacturing a polishing pad that is free from a gate vestige pad from an extruded amorphous thermoplastic.

Substrate polishing device and method

The present invention is directed, in general, to a polymer with altered properties to make the pad more suitable for use in customized semiconductor, in particular, shallow trench isolation chemical mechanical polishing applications. A method of preparing such polymers comprises exposing a plastic substrate to a supercritical fluid containing a precursor. By virtue of the reactive environment provided by the supercritical fluid, the precursor is grafted throughout the plastic, thereby changing its bulk properties. A wide variety of grafted compounds, including inorganic, wetability and inorganic-organic compounds, may thus be incorporated into the plastic to form a new polymer endowed with new set of favorable polishing properties.

Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor

The present invention is directed, in general, to an improved material and method of planarizing a surface on a semiconductor wafer and, more specifically, to a method of altering the properties of polymers, preferably thermoplastic foam polymers, used in polishing applications. The chemical and mechanical properties thermoplastic foam substrates can be transformed by inorganic, inorganic-organic, and or organic&mdash;organic grafting techniques, such that the polymer foam is endowed with new set of properties that more desirable and suitable for polishing.

Method of altering and preserving the surface properties of a polishing pad and specific applications therefor

The present invention is directed, in general, to polishing pads for chemical mechanical polishing of semiconductor wafers and integrated circuits. More specifically, the invention is directed to polishing pads containing a precursor slurry modifier. In the presence of a polishing slurry during chemical mechanical polishing, the precursor is released to the polishing slurry to form a slurry modifier thereby improving polishing.

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Pembroke Pines, FL, United States of America

Edward M Yokley