International Business Machines Corporation

Edward D Babich

Jane M Shaw

Michael Hatzakis

David F Witman

Jeffrey Donald Gelorme

Jurij R Paraszczak

Karen Elizabeth Petrillo

Marie Angelopoulos

David Earle Seeger

Sharon L Nunes

Kevin J Stewart

Inna V Babich

John Patrick Simons

Richard P McGouey

Russell J Serino

Wayne Martin Moreau

Katherina E Babich

Kuang-Jung Chen

Ronald Wayne Nunes

James J Bucchignano

Scott L Jacobs

Juri R Parasczcak

Steven A Rishton

Sampath Purushothaman

Fuad Elias Doany

Timothy A Brunner

Alessandro Cesare Callegari

Ari Aviram

Ranee W Kwong

Thomas Benjamin Faure

C Richard Guarnieri

Eileen Ann Galligan

Donis G Flagello

Juri R Parasczak

John J Liutkis

The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.

Energy sensitive electrically conductive admixtures, uses thereof, methods of fabrication and structures fabricated therewith

A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.

Forming a pattern of a negative photoresist

The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.

Plasma resistant composition and use thereof

Energy sensitive electrically conductive admixtures

The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365, and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks.

Sputter deposition of hydrogenated amorphous carbon film and

The sensitivity of a photoresist to actinic light is improved by the addition of certain dyes. The photoresist includes a polymer matrix, a photosensitive acid generator and at least one compound selected from the group consisting of dyes containing at least one heterosulphur atom such as 2,2.sup.1,5.sup.1,2'-terthiophene and its derivatives; thianthrene and its derivatives, and 4,6-diphenylthieno(3,4-d)-1,3-dioxol-2-one-5,5-dioxide; phenylsulfone and its derivatives; and 4,5-diphenyl-1,3-dioxol-2-one; 3,4-bis(acetoxymethyl)furan; chelidonic acid and its derivatives; and 5,7,12,14-pentacenetetrone. Resist images on a substrate are formed from the compositions.

Photoresist having increased sensitivity and use thereof

The sensitivity of a photoresist to actinic light is improved by the addition of certain dyes. The photoresist includes a polymer matrix, a photosensitive acid generator and at least one compound selected from the group consisting of dyes containing at least one heterosulphur atom such as 2,2.sup.1,5.sup.1,2'-terthiophene and its derivatives; thianthrene and its derivatives, and 4,6-diphenylthieno(3,4-d)-1,3-dioxol-2-one-5,5-dioxide; phenylsulfone and its derivatives; and 4,5-diphenyl-l,3-dioxol-2-one; 3,4-bis(acetoxymethyl)furan; chelidonic acid and its derivatives; and 5,7,12,14-pentacenetetrone. Resist images on a substrate are formed from the compositions.

Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.

Dielectric structures having embedded gap filling RIE etch stop

A dry developable photoresist composition that contains in admixture a polymeric epoxide; a di- or polyfunctional organosilicon material; and an onium salt; and use thereof to produce an image.

Dry developable photoresist and use thereof

A composition containing novolak polymer, and/or poly(p-vinylphenol), an organometallic material, an amino polymer a cationic photocatalyst. The composition can also include a cosensitizer material which makes a composition sensitive to near U.V. radiation.

Base developable negative photoresist composition and use thereof

A composition containing an organosilicon material having terminal quinone groups, and a phenolic-novolak polymer, and use thereof in photolithography.

Alkaline developable photoresist composition containing radiation

Dry developable photoresist containing an epoxide, organosilicon and

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Chappaqua, NY, United States of America

Edward D Babich