Lucent Technologies Inc.

Edward Alan Dein

Sailesh Mansinh Merchant

Pradip Kumar Roy

Arun Kumar Nanda

Cheryl Anne Bollinger

Cletus Walter Wilkins, Jr

Richard Allen Pudliner

Michael Douglas Gross

Dielectric layers comprising a silicon oxide and having essentially constant thickness across a wafer are produced by a plasma-deposition method; in preferred processing, a wafer is supported on a surface which extends significantly past the edge of the wafer. Resulting layers may be further processed by localized etching of windows or vias, uniform layer thickness being particularly beneficial, when timed etching is used, to ensure uniformity of etched openings.

Dielectric film deposition method and apparatus

A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems.

Multilayered A1-alloy structure for metal conductors

A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems. The selection of the thickness of the second sublayer to be a major portion and the inclusion of barrier layers are also described.

Method of making multilayered Al-alloy structure for metal conductors

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Horsham, PA, United States of America

Edward Alan Dein