Novellus Systems Incorporated

Edith Goldner

George D Papasouliotis

Vikram Singh

Md Sazzadur Rahman

Vishal Gauri

Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

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Sunnyvale, CA, United States of America

Edith Goldner