Infineon Technologies Ag

Other

Freescale Semiconductor,inc.

Nanophotonics Ag

Infineon Technologies Sg300 Gmbh & Co. Kg

Eckhard Marx

Detlef Gerhard

Martin Peiter

Karl Emerson Mautz

Michael Abraham

Ulrich Mantz

Johannes Lechner

Pierre-Yves Guittet

Volker Tegeder

Steffen Franke

Jens Muller

The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 &#x3bc;m. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters.

Noninvasive method for characterizing and identifying embedded micropatterns

A measurement device, i.e. a metrology tool, and a vehicle are combined to provide a mobile metrology in a fabrication facility. Peripheral equipment such as a device transfer unit, for, e.g., FOUPs in semiconductor manufacturing, an electronic control system with, e.g., a PC, monitor, and keyboard and optionally a vacuum pump is also provided in module frames of the vehicle. The measurement configuration particularly reduces bottleneck situations in equipment qualifying of processing tools during fast ramp-up phases of, e.g., semiconductor manufacturing facilities, thereby saving costs. The construction is based on PGVs or AGVs and allows a fast operation directly at the location of a processing tool. With the possible exception of power supply or operator control, the measurement configuration can operate fully autonomously.

Measurement configuration including a vehicle and method for performing measurements with the measurement configuration at various locations

The present invention relates to a scribing method for wafers (), wherein a defined beam () is directed onto the wafer () by means of a beam generator means () so as to remove some wafer material from a wafer region. The invention also relates to a wafer-scribing device including a wafer mount () and a beam generator means () by means of which at least one defined beam can be directed onto the wafer (). The inventive method is distinguished by the by the further step of generating a first radiation pulse having a predeterminable energy density and used to create a comparatively deep pit () in the wafer (). The inventive wafer scribing means is distinguished by the provision that a radiation pulse can be generated by means of which a comparatively deep pit () can be created in the wafer ().

Wafer scribing method and wafer scribing device

A three-dimensional image of a semiconductor device identification pattern is obtained by measuring the distance of at least one sensor to the surface of the semiconductor device. The apparatus includes a source of radiation for deriving the distance from properties of the reflected light. A unit for determining the distance and an image processing unit are used to establish the three-dimensional picture. Positional information can be achieved in a scanning movement from motors being controlled by a control unit. By applying a threshold value, a two-dimensional image is derived and by a pattern recognition algorithm, the identification pattern can be analyzed.

Semiconductor device identification apparatus

A metrology device is described which is couplable to a load port of a semiconductor product handling and/or processing tool. The tool encloses a mini-environmental atmosphere and has a load port table for supporting devices to be coupled to the load port. The metrology device contains a housing preserving an inner atmosphere, a coupling region for connecting the inner atmosphere to the mini-environmental atmosphere and a measuring device for measuring a property of a semiconductor product. The metrology device further has a support which is movable by a transport device and which is dimensioned such that the metrology device is self-supporting in a position appropriate for coupling the coupling region to the load port. The metrology device is thereby couplable to the load port without being supported by the load port table.

Self-supporting adaptable metrology device

A wafer marking is disclosed, which is represented by a large number of soft marks incorporated into a surface of a wafer. The soft marks each have a depth of at least 4 &mgr;m, an internal diameter of at least 50 &mgr;m and, in a particularly advantageous manner, a minimum gradient their surface of 0.2. These depressions can be proded, using appropriate technology, with depths of up to &mgr;m.

Wafer marking

A configuration for the automatic inscription or reinscription of wafers provides the wafers with a marking for identification and for process management during the production of semiconductor components. The wafer must be moved between different stations for the automatic inscription of a wafer in an appropriate device. Considerable transport movements are saved by the integration of a read station in an inscription chamber having a positioning unit for the wafer.

Growing community of inventors

Radeburg, Germany

Eckhard Marx