Basf Se Corporation

Eason Yu-Shen Su

Shyam Sundar Venkataraman

Christian Schade

Yuzhuo Li

Arend Jouke Kingma

Vijay Immanuel Raman

Bastian Marten Noller

Sheik Ansar Usman Ibrahim

Ning Gao

An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)/(B2)Y](I), wherein the indices and the variables have the following meaning: m, n, and p integers&#x2267;1; R hydrogen atom or monovalent or polyvalent organic residue, except C-Calkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C-Calkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(&#x2550;O)(OR1)(OR2) or phosphonic acid (P(&#x2550;O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives

Provided is a process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a chemical mechanical polishing (CMP) composition which comprises: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of anionic phosphate or phosphonate as dispersing agent or charge reversal agent, (C) at least one type of surfactant, and (D) an aqueous medium.

Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate

Growing community of inventors

Taipei, Taiwan

Eason Yu-Shen Su