Novellus Systems Incorporated

E Derryck Settles

Ronald Allan Powell

Sridhar Karthik Kailasam

Robert T Rozbicki

Erich R Klawuhn

Mukul Khosla

Larry R Lane

Lap Tam

Ronald D Allen

A mosaic or inlaid sputter target design suitable for conventional planar magnetron deposition, RF ionized physical vapor deposition, HCM ionized PVD, ionized metal plasma (IMP) deposition, or self-ionized plasma (SIP) deposition of multi-component alloys for use in integrated circuit metallization. Inlays are inserted within a planar sputter target in the shape of wedges, wires, or buttons to achieve uniform deposition of films on semiconductor substrates during sputtering. Metal alloy strips within a three-dimensional HCM target achieve the same uniform deposition. The deposition leads to the production of CuAl, CuBe, CuB, CuCd, CuCo, CuCr, CuIn, CuPd, CuSn, CuTa, CuTi, CuZr or CuZn alloy films deposited on the wafer. Non-copper films may also be deposited. The inlay-target adjoining surfaces may be machine stepped or tapered to limit wicking from the target backing material.

Sputter apparatus for producing multi-component metal alloy films and method for making the same

The present invention pertains to systems and methods for simultaneously producing a diffusion barrier and a seed layer used in integrated circuit metallization. This is achieved by initially depositing copper-magnesium (Cu&mdash;Mg) alloys with relatively high levels of Mg (>10 atomic %, which is equivalent to about >4 weight %). After the alloys are deposited, they self-form a magnesium oxide (MgO) based barrier layer at the substrate interface, thus eliminating the need for a separate operation for barrier deposition. The migration of Mg to the substrate interface leaves the remainder of the film relatively pure Cu.

High magnesium content copper magnesium alloys as diffusion barriers

A method and apparatus for performing reflectometry using a specific wavelength or a small number of specific wavelengths within a spectral range to detect the presence of a copper oxide film on a substrate or to measure the film thickness is described. A method for analyzing reflectivity data to obtain film thickness is also described. Using the described method and apparatus, reflectometry can be performed using only one or two wavelengths of light so that simple photodiode detectors may be used instead of a complex and costly spectrometer (although a spectrometer may be used to detect the reflected light). Therefore, the described invention can provide in-situ or vacuum integrated metrology with simple, low-cost hardware. Finally, the described method does not require detailed curve fitting and thus the necessary thickness data can be acquired rapidly.

Method and apparatus for in-situ measurement of thickness of copper oxide film using optical reflectivity

A heater for heating a substrate in a supercritical fluid reactor includes a heater body having a heater chamber initially open to the interior of the reactor. The heater chamber is sized to match the substrate and includes a seal around its perimeter that seals against the perimeter of the substrate and forms a closed heater chamber with the backside of the substrate. A heating element, insulated from the heater body, preferably with pyrolytic graphite, is located in the heater chamber to heat the substrate from the backside. A clamp ring with a seal around its inner perimeter cooperates with the heater body to seal the substrate to the heater body. The heater is preferably spaced apart from the substrate, as well as the walls of the eater chamber and the insulator, to provide uniform heating by transferring heat through the supercritical fluid. The invention is also directed to the method of heating the substrate in which the supercritical fluid reactor is pressurized before the heater chamber is sealed or isolated to maintain uniform pressure on the substrate.

Method and apparatus for heating substrates in supercritical fluid reactor

Non-volatile and oxide residues that form during semiconductor processing are removed from the semiconductor structure in a two-stage process. An inert gas and a reducing gas are introduced to the reactor. In the first stage, the non-volatile contaminants are sputtered from the semiconductor structure by creating a plasma to ionize the inert gas. The power applied to the plasma is preferably high enough to give the ions of the inert gas a high degree of directionality as they approach the structure. The first stage is continued until the non-volatile contaminants have been sufficiently removed from the structure. In the second stage, the power is reduced and the reducing gas (e.g., hydrogen) reacts with the oxides (e.g., copper oxide) to form elemental metal and water vapor. During the second stage there is no appreciable sputtering, and therefore the damage to the structure is limited as compared with processes that use sputtering and reduction simultaneously.

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Franklin, MA, United States of America

E Derryck Settles