Hitachi Global Storage Technologies Netherlands B.v.

Dwight Cornwell

Douglas Johnson Werner

A method for fabricating a thin film component according to one embodiment comprises forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist; transferring the pattern of the layer of photoresist to the release layer and the thin film layer; adding a layer of metal to the wafer; heating the wafer to a predetermined temperature for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer; applying a solvent to dissolve at least a portion of the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer; and removing the release layer and any portions of the layers above the release layer.

Image transfer process for thin film component definition

A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.

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Salinas, CA, United States of America

Dwight Cornwell