Robert Boschgmbh

Dusan Radovic

Jochen Reinmuth

Rolf Scheben

Matthias Kuehnel

Amin Jemili

Christoph Zimmer

Michael Herman

Wenqing Liu

Eric Sebastian Schmidt

Steffen Becker

Jan Martin Lubisch

A method for temperature compensation of a MEMS sensor. The method includes: in a balancing step, a temperature gradient is produced by a thermal element and a first and a second temperature are determined at a first and a second temperature measurement point, wherein a deflection of a movable structure produced by the temperature gradient is measured and a compensation value is ascertained dependent on the first and second temperature and the deflection; in a measurement step, a physical stimulus is measured by way of a deflection of the movable structure and a third and fourth temperature is determined at the first and second temperature measurement points; in a compensation step, a measured value of the physical stimulus is ascertained dependent on the measured deflection, the third and fourth temperature and the compensation value. A method is also provided including: a regulation step, and a measurement step.

Method for temperature compensation of a microelectromechanical sensor, and microelectromechanical sensor

A computer-implemented method for inferring a device feature of a device produced on a wafer. The method includes: providing a wafer feature model associating a wafer position indicating a position of a produced device on the wafer to a device feature, wherein the wafer feature model is configured to be trained by one or more wafer feature maps and particularly configured as a Gaussian process model, providing a sample device feature of at least one device at a sample wafer position, and inferring the device feature of at least one other device of the wafer depending on the provided wafer feature model.

Method and device for determining a feature for devices produced on a wafer

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Stuttgart, Germany

Dusan Radovic