Samsung Electronics Co., Ltd.

Dougyong Sung

Seungbo Shim

Yun-Kwang Jeon

Myungsun Choi

Junghyun Cho

Minsung Kim

Myoung Soo Park

Donghyeon Na

Minyoung Hur

Kangmin Jeon

Hoyong Park

Sung-Ki Lee

Yonghee Kim

Namjun Kang

Je-Hun Woo

Minkyu Sung

Juho Lee

Sang-Ho Lee

Jongwoo Sun

Suho Lee

Kyung-Sun Kim

Minjae Lee

Sejin Oh

Hakyoung Kim

Dongyun Yeo

Bongseong Kim

Dong-Hyub Lee

Seongha Jeong

Byunghun Han

Hyeongmo Kang

Ungyo Jung

Sungjin Kim

Jung Min Kim

Jaehyun Lee

Kyunghyun Kim

Hyunju Lee

Dongwan Kim

Heungsik Park

Kyohyeok Kim

Byeongsang Kim

Jewoo Han

Nam Kyun Kim

Tae-Hwa Kim

Myeongsoo Shin

Yunhwan Kim

Kiho Hwang

Naohiko Okunishi

Sungwon Cho

Hyosin Kim

Hadong Jin

Kyuho Kim

Younsok Choi

Kyeongtea Bang

Seungkyu Lim

Kimoon Jung

Sungjun Ann

Younseon Wang

Inseok Seo

Taekjoon Rhee

Sungwook Hong

Sangmin Jeong

Jungmo Yang

Dohoon Kwon

A plasma sensor module may include an upper substrate, a lower substrate, at least one probe and a printed circuit board (PCB). The upper substrate may be configured to be exposed to plasma. The lower substrate may contact a lower surface of the upper substrate. The lower substrate may have a thickness that is thicker than a thickness of the upper substrate. The probe may be in the lower substrate. The PCB may be in the lower substrate. The PCB may be configured to apply an alternating current to the probe to detect a density of the plasma. Thus, the structural strength of the plasma sensor module may have improved structural strength.

Plasma sensor module

Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

Antennas, circuits for generating plasma, plasma processing apparatus, and methods of manufacturing semiconductor devices using the same

An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

Impedance measurement jig and method of controlling a substrate-processing apparatus using the jig

A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Plasma etching method and semiconductor device fabrication method including the same

A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.

Method of manufacturing semiconductor device

Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method

A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.

Plasma processing apparatus

A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

Gas injection module, substrate processing apparatus, and method of fabricating semiconductor device using the same

A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

Plasma control apparatus and plasma processing system including the same

A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

Gas supply assembly and substrate processing apparatus including the same

Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

Method of plasma etching and method of fabricating semiconductor device using the same

Growing community of inventors

Seoul, South Korea

Dougyong Sung