International Business Machines Corporation

Douglas Keith Sturtevant

Matthew T Tiersch

Timothy Charles Krywanczyk

Jose L Cruz

Cuc Kim Huynh

Paul H Smith, Jr

Richard John Lebel

Rock Nadeau

Charles A McKinney

Steven James Messier

Timothy J Rickard, Jr

Daniel D Desorcie

A CMP slurry for and method of polishing a semiconductor wafer during formation of metal interconnects are disclosed. The present invention utilizes a first slurry comprising a first oxidizer, preferably ferric nitrate, to remove the excess metal of the metal interconnect but which leaves the metal residues on the surface of the wafer. A second slurry comprising another oxidizer, preferably potassium iodate solution, having a greater affinity to both the metal residue and the liner material than the underlying dielectric is used to remove the metal residue and liner material with significantly reduced scratching of the underlying dielectric. The more robust metal interconnects formed utilizing the present invention is effective in lowering the overall resistance of a wafer, reducing the number of shorts, and provides greater protection of the underlying dielectric. Overpolishing of the wafer and its associated problems are avoided.

Method to prevent leaving residual metal in CMP process of metal interconnect

A method and apparatus for polishing a semiconductor wafer using a polishing pad. Circumferential rings of alternating compressibility of hard and soft/sponge-like material are located in the polishing pad. The concentric rings may also be located off-center from the geometric center of the polishing pad.

Composite polish pad for CMP

An apparatus for polishing a semiconductor wafer is provided which includes a wafer carrier having on its lower surface a non-uniform surface structure means to vary the force against a wafer during a polishing operation so that the polishing is enhanced and imparts a planar surface across the polished wafer. Preferred non-uniform surface structure means include use of a wafer carrier having on its lower surface a backing film having a first central portion having a predetermined compressibility and a second peripheral portion having a different compressibility than the first portion. Another non-uniform surface structure means to vary the force against the wafer comprises a wafer carrier having on its lower surface a raised circumferential region around the periphery of the carrier.

CMP wafer carrier for preferential polishing of a wafer

A method and apparatus for polishing a semiconductor wafer using a polishing pad. The polishing pad contains circumferential grooves which are located off center from the geometric center of the polishing pad.

Off-center grooved polish pad for CMP

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Essex Junction, VT, United States of America

Douglas Keith Sturtevant