International Business Machines Corporation

State University of New York

United States of America As Represented by the Secretary of the Air Force

University of California

Columbia University

University of Arizona

Globalfoundries U.S. 2 LLC

Analog Photonics LLC

Morton Photonics Incorporated

Morton Photonics Incorporation

Douglas Duane Coolbaugh

Ebenezer E Eshun

Anthony K Stamper

Robert Mark Rassel

Zhong-Xiang He

Anil Kumar Chinthakindi

Jeffrey Bowman Johnson

Kunal Vaed

David Charles Sheridan

Jeffrey P Gambino

James Stuart Dunn

Keith Edward Downes

Arne Watson Ballantine

John Edward Florkey

Gerald L Leake

Stephen Arthur St Onge

Louis DeWolf Lanzerotti

Douglas La Tulipe

Daniel C Edelstein

Xuefeng Liu

William Joseph Murphy

Kathryn Turner Schonenberg

Vidhya Ramachandran

Terence B Hook

David Louis Harame

Peter James Lindgren

Stephen Scott Furkay

Timothy Joseph Dalton

Thomas N Adam

Bradley Alan Orner

Edmund Juris Sprogis

John Michael Cotte

Richard Paul Volant

Natalie Barbara Feilchenfeld

Kenneth Jay Stein

Peter John Geiss

Matthew D Moon

Jeffrey D Gilbert

Glenn Robert Miller

Barbara Ann Waterhouse

Alvin Jose Joseph

Jack Oon Chu

Eduard Albert Cartier

Evgeni Petrovich Gousev

Eric Jeffrey White

Richard John Rassel

Seshadri Subbanna

Harald F Okorn-Schmidt

David R Greenberg

Basanth Jagannathan

Ryan Wayne Wuthrich

Joseph R Greco

Robb Allen Johnson

Steven H Voldman

Jonghae Kim

Wolfgang Sauter

Baozhen Li

Hayden C Cranford, Jr

Kevin Shawn Petrarca

Herbert Lei Ho

Fen Chen

James Spiros Nakos

Gregory Gower Freeman

Paul A Morton

Peter B Gray

Douglas Andrew Buchanan

Ronald Jay Bolam

Jean-Oliver Plouchart

Donna Kaye Johnson

Douglas Brian Hershberger

Ramachandra Divakaruni

Kevin K Chan

Ping-Chuan Wang

Chandrasekharan Kothandaraman

Hanyi Ding

Bomy A Chen

Michael Robert Watts

Michal Lipson

Vincent James McGahay

John E Bowers

Roger Allen Booth, Jr

Robert Allen Groves

Paul Christian Parries

Michael Joseph Zierak

Deok-Kee Kim

Joseph Francis Shepard, Jr

Hongwen Yan

John Matthew Safran

Dan Moy

Ephrem G Gebreselasie

Kimball M Watson

Mete Erturk

Norman Whitelaw Robson

John Chester Malinowski

Ricky S Amos

Christopher V Baiocco

Keren Bergman

Jonathan Klamkin

Lawrence Robert Blumberg

Thomas L Koch

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

Wafer scale bonded active photonics interposer

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

Integrated photonics including waveguiding material

There is set forth herein a photonics device. The photonics device can comprise a substrate, a conductive material formation, a dielectric stack, and a barrier layer. The photonics device can transmit a light signal.

Photonics light signal transmission

There is set forth herein an integrated photonics structure having a waveguide disposed within a dielectric stack of the integrated photonics structure, wherein the integrated photonics structure further includes a field generating electrically conductive structure disposed within the dielectric stack; and a heterogenous structure attached to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure. There is set forth herein a method including fabricating an integrated photonics structure, wherein the fabricating an integrated photonics structure includes fabricating a waveguide within a dielectric stack, wherein the fabricating an integrated photonics structure further includes fabricating a field generating electrically conductive structure within the dielectric stack; and attaching a heterogenous structure to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure.

Heterogeneous structure on an integrated photonics platform

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

Photonics optoelectrical system

There is set forth herein an optoelectrical system comprising: a conductive path for supplying an input voltage to a photonics device, wherein the conductive path comprises a base structure through via extending through a substrate and a photonics structure through via, the photonics structure through via extending through a photonics device dielectric stack. There is set forth herein an optoelectrical system comprising: a second structure fusion bonded to an interposer base dielectric stack of a first structure. There is set forth herein a method comprising: fabricating a second wafer built structure using a second wafer, the second wafer built structure defining a photonics structure and having a photonics device integrated into a photonics device dielectric stack of the second wafer based structure; and wafer scale bonding the second wafer built structure to a first wafer built structure.

There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.

Fabricating photonics structure light signal transmission regions

There is set forth herein a method including a substrate; a dielectric stack disposed on the substrate; one or more photonics device integrated in the dielectric stack; and a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack.

Photonics structure with integrated laser

In one embodiment an optoelectronic system can include a photonics interposer having a substrate and a functional interposer structure formed on the substrate, a plurality of through vias carrying electrical signals extending through the substrate and the functional interposer structure, and a plurality of wires carrying signals to different areas of the functional interposer structure. The system can further include one or more photonics device integrally formed in the functional interposer structure, and one or more prefabricated component attached to the functional interposer structure.

Photonics interposer optoelectronics

Integrated photonics including germanium

There is set forth herein a method including building an interposer base structure on a first wafer having a first substrate, wherein the building an interposer base structure includes fabricating a plurality of through vias that extend through the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layer; building a photonics structure on a second wafer having a second substrate, wherein the building a photonics structure includes fabricating within a photonics device dielectric stack formed on the second substrate one or more photonics device; and bonding the photonics structure to the interposer base structure to define an interposer having the interposer base structure and one or more photonics device fabricated within the photonics device dielectric stack. There is set forth herein an optoelectrical system including a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, and a photonics device dielectric stack, and a bond layer dielectric stack that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack.

Growing community of inventors

Essex Junction, VT, United States of America

Douglas Duane Coolbaugh