Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronics Materials LLC

Doris H Kang

Cong Liu

Deyan Wang

Mingqi Li

Cheng-Bai Xu

Irvinder Kaur

Chunyi Wu

Gerhard Pohlers

George G Barclay

Anthony Zampini

Shintaro Yamada

Clark H Cummins

Matthias Stefan Ober

Huaxing Zhou

Thomas A Estelle

Joon Seok Oh

Jinrong Liu

Joon-Seok Oh

Kenneth J Spizuoco

Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: Rrepresents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; Rindependently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one Ris not a hydrogen atom, wherein the Rgroups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the Rgroups taken together is from 2 to 20; Rrepresents an optionally substituted C1-C4 alkylene group, wherein an Rgroup optionally forms a cyclic structure with R; and Rindependently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer is present in the composition in an amount of from 0.1 to 30 wt % based on total solids of the composition; and an organic-based solvent system comprising a plurality of organic solvents. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I),

Topcoat compositions and photolithographic methods

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents linear, branched or cyclic C1 to C20 alkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Topcoat compositions containing fluorinated thermal acid generators

New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

Processes for photolithography

Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: Rrepresents H, F, methyl or fluorinated methyl; Rrepresents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; Rrepresents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; Rrepresents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR, wherein Ris chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Topcoat compositions and pattern-forming methods

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.

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Shrewsbury, MA, United States of America

Doris H Kang