Samsung Electronics Co., Ltd.

Doo-Hoon Goo

Gi-Sung Yeo

Sang-Gyun Woo

Han-Ku Cho

Jung-hyeon Lee

Woo-Sung Han

Kyoung-Yun Baek

Joo-Tae Moon

Jeong-Ho Yeo

Jin-Jun Park

Si-hyeung Lee

In-Sung Kim

Jeong-Hoon Lee

Jin-Hong Park

Chang-Min Park

Joo-On Park

Eun-Mi Lee

In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

Methods of forming fine patterns using a nanoimprint lithography

A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.

Semiconductor memory devices including offset bit lines

A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

Semiconductor memory devices including offset active regions

A semiconductor memory device includes a plurality of rows, each row comprising a plurality of active regions arranged at a pitch wherein the active regions in adjacent rows are shifted with respect to each other by one half of the pitch, wherein a distance between each active region in a row is equal to a distance between active regions in adjacent rows.

Semiconductor memory device having high electrical performance and mask and photolithography friendliness

There are provided a method of forming a trench for a recessed channel of a transistor and a layout for the same. A layout for the recessed channel according to one aspect of the present invention is formed such that an open region is extended across at least one of a first active region in a lateral direction, and also across another second active region in parallel with the first active region in a diagonal direction, and the extension is cut not to reach an isolation region between two third active regions that are in parallel with the second active region in a diagonal direction, and have noses facing each other in a longitudinal direction, and the layout includes an alignment of a plurality of open regions, which are discontinuously aligned. An etch mask is formed using the layout, and a semiconductor substrate is etched using the etch mask, and a trench for a recessed channel is formed on the active region.

Method of forming trench in semiconductor device

DRAM devices include a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction and intersecting the word lines. A plurality of active regions is provided that are electrically coupled to the word lines and the bit lines. Each of the active regions defines a single unit memory cell having an area of 6Fin terms of a minimum line width F. Each of the active regions may be overlapped by only one word line and the active regions may be defined by an isolation region.

DRAM devices having an increased density layout

A semiconductor memory device comprises a plurality of rows, each row comprising a plurality of active regions arranged at a pitch wherein the active regions in adjacent rows are shifted with respect to each other by one half of the pitch, wherein a distance between each active region in a row is equal to a distance between active regions in adjacent rows.

A wafer, having alignment marks formed thereon, is aligned by radiating a first light beam onto the alignment marks so as to generate a first diffracted light beam. The first diffracted light beam is sensed at a first position. A second light beam is radiated onto the alignment marks so as to generate a second diffracted light beam. The second diffracted light beam is sensed at a second position. A correction value is calculated based on a first difference between the first position and a first predetermined position and a second difference is calculated based on a second difference between the second position and a second predetermined position. The wafer is aligned based on the correction value.

Methods and apparatus for aligning a wafer in which multiple light beams are used to scan alignment marks

Embodiments of the invention provide methods of forming SAC pads in non-straight semiconductor device having non-straight type or separate type active regions. A plurality of gate line structures extending in one direction may be formed on a semiconductor substrate having non-straight active regions. An interlayer insulating layer covering gate line structures may be formed on the gate line structures. Then, a photo-resist layer may be formed on the interlayer insulating layer. A photo-resist pattern may be formed through exposing and developing the photo-resist layer by using a photo-mask having, for example, a bar type, a wave type, or a reverse active type pattern. Then, contact holes exposing source/drain regions may be formed by etching the interlayer insulating layer using the photo-resist pattern as an etching mask. Contact pads may then be formed by filling the contact holes with a conductive material.

Method of forming self-aligned contact pads of non-straight type semiconductor memory device

Methods and apparatus for varying the number and intensity of beams of a photo-lithographic light source for exposing photoresist materials include beam dividers and beam focusing means. Methods include producing an incident light beam having uniform intensity distribution, refracting the incident light beam into a plurality of divergent beams, refracting the plurality of divergent beams into a plurality of parallel beams, and exposing an object with light of the plurality of parallel beams. Apparatus includes source of light beam having uniform intensity distribution, first refracting element for refracting the light beam into a plurality of divergent beams, second refracting element for refracting the plurality of divergent beams into a plurality of parallel beams, and means for exposing the object with light of the plurality of parallel beams. Variations in the separations of the refractive elements allows for the control of the size, shape, and dispersion patterns of resultant beams.

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Hwaseong-si, South Korea

Doo-Hoon Goo