Asml Netherlands B.v.

Nikon Corporation

Asml Masktools B.v.

Asml Holding N.v.

Carl-zeiss-smt Ag

Donis George Flagello

Robert John Socha

Daniel Gene Smith

Michael B Binnard

Kevin D Cummings

Alexander Straaijer

David Michael Williamson

Stephen P Renwick

Steve Hansen

Marcel Mathijs Theodore Marie Dierichs

Jozef Maria Finders

Steven George Hansen

Shane Roy Palmer

James Sherwood Greeneich

John Doering

Johannes Jacobus Matheus Baselmans

Wolfgang Singer

Arno Jan Bleeker

Markus Franciscus Antonius Eurlings

Kars Zeger Troost

Tammo Uitterdijk

Bernd Geh

Vladan Blahnik

Michel Fransois Hubert Klaassen

Remco Marcel Van Dijk

Julia A Sakamoto

Markus Schluter

Johannes J Baselmans

Igor P Bouchoms

Steven G Hansen

Collection reflectors with multiple reflector elements defined on a curved surface are used to collect EUV optical radiation from an EUV emitting area. Each of the reflector elements can image the emitting area at or near a corresponding reflective element of a second multi-element reflector that overlaps radiation from each of the multiple reflector element of the collection reflector to illuminate a grating reticle. Systems with such a collection reflector can use fewer optical elements. In addition, grating reticles are defined on a curve substrate an include a plurality of grating phase steps so that the grating reticle provides phase curvature along two axes but with physical curvature along a single axis. Methods of producing varying duty cycle 1D patterns are also disclosed.

Curved reticle by mechanical and phase bending along orthogonal axes

A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of two optical reflectors disposed sequentially to transfer EUV radiation incident onto the first optical component to the pattern-source the substantially one-dimensional pattern of which is disposed in a curved surface. In one case, such combination includes only two optical reflectors (each may contain multiple constituent components). The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optical sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

Illumination system with curved 1d-patterned mask for use in EUV-exposure tool

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N&#x3e;1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Euv lithography system for dense line patterning

EUV lithography system for dense line patterning

Phase conflicts in pattern transfer with phase masks can be resolve by exposing pattern features with a first pattern and a second pattern, wherein the second pattern is selected based on the phase conflicts. In scanned exposures using pulsed lasers, a number of exposures of the second pattern can be less than 20% of a total number of exposures.

Dynamic patterning method that removes phase conflicts and improves pattern fidelity and CDU on a two phase-pixelated digital scanner

A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.

Using customized lens pupil optimization to enhance lithographic imaging in a source-mask optimization scheme

A lithographic method is disclosed that includes, on a substrate provided with a layer of a resist and a further layer of a material provided on the layer of resist, providing a pattern in the further layer, the pattern defining a space via which an area of the layer of resist may be exposed to radiation, a distance between features of the pattern defining the space, and exposing the layer of resist to radiation having a wavelength greater than the distance between features of the pattern defining the space, such that near-field radiation is generated which propagates into and exposes an area of the resist.

Lithographic substrate and a device

Method of predicting a distribution of light in an illumination pupil of an illumination system includes identifying component(s) of the illumination system the adjustment of which affects this distribution and simulating the distribution based on a point spread function defined in part by the identified components. The point spread function has functional relationship with configurable setting of the illumination settings.

Fast illumination simulator based on a calibrated flexible point-spread function

Lithographic method

A method of modeling an image intended to reside in a photoresist film on a substrate is provided. A simulated latent acid image of the image is produced, the simulated latent acid image is compressed in a predetermined direction, and developed to a pattern that enables (a) transfer of the pattern to the substrate or (b) further modeling of the pattern for transfer to the substrate.

Fast photoresist model

A method for matching characterizing features of an optical scanner against target characterizing features is provided. The characterizing features are produced from characterizing data (also referred to as a signature characteristic) produced from a scan of a mask by the scanner against target scanner signature characteristics produced from a scan of the mask by another optical scanner that produces the target scanner signature characteristic.

Method or matching high-numerical aperture scanners

Disclosed concepts include a method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate. Polarized illumination is optimized by determining an illumination intensity for at least one point on an illuminator for at least two polarization states, determining image log slope for the at least one point on the illuminator for the at least two polarization states, determining a maximum image log slope (ILS) where the ILS is near zero for the at least one point on the illuminator, and selecting an optimal polarization state corresponding to the at least two polarization states that minimizes an ILS for the at least one point on the illuminator. This may be repeated for a plurality of points on the illuminator.

Optimized polarization illumination

A device manufacturing method, is presented herein. In one embodiment, the device manufacturing method includes a mask for use with DUV having a quartz substrate and chrome absorber. The chrome absorber has a thickness of about 700 nm which causes increased TE polarization in the transmitted light and improves contrast at the substrate level.

Device manufacturing method and mask for use therein

A lithographic apparatus includes a first diffraction grating configured to create a first plurality of spatially coherent radiation beams and a second diffraction grating configured to receive at least a portion of the first plurality of spatially coherent radiation beams and to create, based on the first plurality of spatially coherent radiation beams, a second plurality of spatially coherent radiation beams. The apparatus also includes a beam combiner adapted to redirect and combine at least a portion of the second plurality of spatially coherent radiation beams onto a surface of a substrate to form an interference pattern.

Lithographic apparatus and device manufacturing method

Growing community of inventors

Scottsdale, AZ, United States of America

Donis George Flagello