Asm IP Holding B.v.

DongHyun Ko

YongGyu Han

WanGyu Lim

YoungJae Kim

TaeHee Yoo

Sunja Kim

KiChul Um

JaeOk Ko

JaeBin Ahn

JeungHoon Han

Wangyu Lim

DooHan Kim

Heesung Kang

A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlayer insulating layer on the first protrusion and the second protrusion, wherein the interlayer insulating layer is selectively formed in an upper space between the first protrusion and the second protrusion by the deposition inhibitor sites and the film-forming layer, and thus an air gap is formed between the first protrusion and the second protrusion.

Semiconductor processing method

A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

Thin film deposition method

Growing community of inventors

Osan-si, South Korea

DongHyun Ko