Samsung Electronics Co., Ltd.

Donghyub Lee

Minseok Choi

Sungho Jang

Youngdo Kim

Jeonggil Kim

Sangki Nam

Eunhee Jeang

Yoonjae Kim

Hyuck Shin

Wondon Joo

Daewon Kang

Kul Inn

Jongbin Park

Chansoo Kang

Changsoon Lim

Jonghun Pi

Hoonseop Kim

Yoojin Jeong

Youngduk Suh

Dohyun Jung

Matsuda Yozo

An extreme ultraviolet (EUV) collector inspection apparatus includes a light blocking cover covering a front surface of an EUV collector to be inspected and providing a space portion in which external light is blocked, a light source in the space portion, the light source having a pillar shape extending along a central axis of the EUV collector, the light source configured to output irradiated light ranging from an ultraviolet (UV) band to a visible light (VIS) band, and a spectrometer above the light source and configured to detect a spectrum of reflected light from the irradiated light reflected from the front surface of the EUV collector. The apparatus or a controller associated therewith may be configured to inspect a contamination state of the front surface of the EUV collector based on the spectrum of reflected light.

EUV collector inspection apparatus and inspection method

A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

Method of cleaning collector of EUV light source system

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

Method of exposure using extreme ultraviolet and method of manufacturing a semiconductor device using the same

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Seoul, South Korea

Donghyub Lee