Samsung Electronics Co., Ltd.

Donghyeon Na

Seungbo Shim

Dougyong Sung

Minyoung Hur

Minjae Lee

Yonghee Kim

Myungsun Choi

Myeongsoo Shin

Namkyun Kim

Dongseok Han

Byunghun Han

Hyeongmo Kang

Sungil Cho

Yongwoo Lee

Kyung-Sun Kim

Jaesung Kim

Sungyong Lim

Dowon Kim

Jinseok Lee

Dongwan Kim

Byeongsang Kim

Kuihyun Yoon

Nam Kyun Kim

Youngjin Noh

Jin Young Bang

Naohiko Okunishi

Seongha Jeong

Minjoon Kim

Hyosin Kim

Hadong Jin

Ungyo Jung

Chungho Cho

Kyungsun Kim

Yoonbum Nam

Tae-sun Shin

Deokjin Kwon

Bongju Lee

Jaebin Kim

A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.

Plasma processing apparatus

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer

A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Plasma etching method and semiconductor device fabrication method including the same

A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Apparatus and method fabricating semiconductor device

An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.

Electrostatic chuck and plasma processing apparatus including the same

A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

Plasma control apparatus and plasma processing system including the same

Growing community of inventors

Hwaseong-si, South Korea

Donghyeon Na