Applied Materials, Inc.

Dong Wu

Anchuan Wang

Gaurav Thareja

Xikun Wang

Sanjay S Natarajan

Sean M Seutter

Keyvan Kashefizadeh

Mehdi Vaez-Iravani

Samer Banna

Waheb Bishara

A semiconductor device fabrication process includes forming gates on a substrate having a plurality of openings, each gate having a conducting layer a first metal and a gate dielectric layer of a first dielectric material, partially filling the openings with a second dielectric material, forming a first structure on the substrate in a processing system without breaking vacuum, depositing a third dielectric material over the first structure, and forming a planarized surface of the gates and a surface of the third dielectric material that is disposed over the first structure. The forming of the first structure includes forming trenches by removing second portions of the second dielectric material within each opening, forming recessed active regions in the trenches by partially filling the trenches with a second metal, forming a liner over each recessed active region, and forming a metal cap layer over each liner.

Gate contact over active regions

Gate contact over active processes

A method for flexible inspection of a sample includes forming an input beam using a beam source, blocking a portion of the input beam using an input mask, and forming a shaped beam from a portion of the input beam. The shaped beam is received at a first portion of an objective lens and focused onto a sample. A reflected beam is collected at a second portion of the objective lens. Scattered light is collected at the first and second portions of the objective lens and at a third portion of the objective lens. The scattered light is received at a dark-field detector module and a portion of the scattered light is directed to a dark-field detector. The dark-field detector module includes an output mask having one or more output apertures that allow at least part of the scattered light that passes through the third portion of the object lens to pass as the portion of the scattered light that is directed to the dark-field detector.

Flexible mode scanning optical microscopy and inspection system

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Fremont, CA, United States of America

Dong Wu