Samsung Electronics Co., Ltd.

Dong-Woon Shin

Bong-hyun Kim

Soo-jin Hong

Han-jin Lim

Jae-young Ahn

Chang-min Park

Seok-Woo Nam

Young-Geun Park

Hyo-Jung Kim

Jun-Kyu Yang

In-Sang Jeon

Su-Min Kim

A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):HSiA(NRR)&#x2003;&#x2003;(1)HSi(NAR)&#x2003;&#x2003;(2)HSi(R)(R)&#x2003;&#x2003;(3)wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R, R, R, and Rare each independently selected from the group of H, aryl, perhaloaryl, Calkyl, and Cperhaloalkyl, and Ris aryl in which at least one hydrogen is replaced with a halogen or Calkyl in which at least one hydrogen is replaced with a halogen.

Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same

The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern

Manufacturing of a charge trap type memory device can include forming a tunnel insulating layer on a substrate. A charge-trapping layer can be formed on the tunnel insulating layer. A blocking layer can be formed on the charge-trapping layer. Gate electrodes can be formed on the blocking layer and divided by a trench. A portion of the charge-trapping layer aligned with the trench may be converted into a charge-blocking pattern with a vertical side profile by an anisotropic oxidation process.

Methods of manufacturing charge trap type memory devices

Growing community of inventors

Seongnam-si, South Korea

Dong-Woon Shin