Industry-university Cooperation Foundation Hanyang University

Semes Co., Ltd.

Actro Co., Ltd.

Samsung Electronics Co., Ltd.

Win & Win Co., Ltd.

Dong Woon Park

Hak Sung Kim

Gyung Hwan Oh

Ju Won Kim

Ki Sang Eum

Sang Pil Yoon

Jun Ho Seo

Heon Su Kim

Sang Jin Kim

Jin Ho Choi

Hak-Sung Kim

Young Jun Son

Woo Ram Lee

Joon Soo Park

Hee Man Ahn

Yang Yeol Ryu

Kwang Sub Yoon

Sang Ii Kim

Chang Jae Yang

Deok Joong Kim

Yun Kyeong Jang

Hye Kyoung Jue

Jong Wha Kang

Proposed is a substrate processing apparatus for cleaning the bottom surface of a substrate. The apparatus includes a processing container configured to form a processing space for a substrate, a substrate support unit provided inside the processing space and configured to support the substrate, a first nozzle unit configured to have a first nozzle member provided on a side of the substrate support unit inside the processing space and supplying a processing fluid toward a center area of a bottom surface of the substrate, and a second nozzle member provided to be fixedly coupled to the substrate support unit and supplying a processing fluid toward an edge area of the bottom surface of the substrate, wherein the first nozzle member is provided to rotate between a center position and an end position of the bottom surface of the substrate.

Substrate processing apparatus and substrate processing method

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

Apparatus for treating substrate

An apparatus for processing a substrate includes a first processing unit configured to have a first processing container having a first inner space and a first support unit supporting and rotating the substrate in the first inner space; a second processing unit configured to have a second processing container having a second inner space and a second support unit supporting and rotating the substrate in the second inner space; an exhaust unit configured to exhaust the first and the second inner space; a first exhaust pipe configured to have a first exhaust port for introducing atmosphere of the first inner space and exhaust the atmosphere introduced through the first exhaust port to the integrated duct; and a second exhaust pipe configured to have a second exhaust port for introducing atmosphere of the second inner space and exhaust the atmosphere introduced through the second exhaust port to the integrated duct.

Apparatus for smoothly exhausting the atmosphere in a processing space when rotating a substrate with liquid

A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.

Plasma process monitoring apparatus using terahertz waves and monitoring method thereof

A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Thickness measuring device

An apparatus for treating a substrate, the apparatus comprising: a treating container having an inner space; a support unit supporting and rotating the substrate in the inner space; and an exhaust unit exhausting an air flow in the inner space, wherein the treating container includes an outer cup providing the inner space; and an inner cup disposed at the inner space and spaced apart from the outer cup, and wherein the outer cup has a protrusion at a side wall thereof.

Apparatus for treating a substrate

According to an embodiment of a specimen inspection apparatus, the specimen inspection apparatus may comprise: a radiation unit; a reflection unit; a focus adjusting unit; a reception unit; and a control unit. The specimen inspection apparatus may comprise: a radiation unit for emitting a terahertz wave; a reflection unit for changing the path of a terahertz wave emitted from the radiation unit; a focus adjusting unit for forming an irradiation region on a specimen according to the path of the terahertz wave; a reception unit for receiving individual terahertz waves obtained by reflection, by the specimen, of the terahertz wave irradiated onto the first region; and a control unit for controlling the distance between at least two elements among the plurality of elements, and detecting whether the specimen is defective, according to the reflectivity difference between the terahertz waves.

Specimen inspection apparatus and specimen inspection method

According to one embodiment of the present invention, A sample inspection device may provided, a total inspection module scanning a first area comprising a plurality of samples; a precision inspection module performing inspection on a sample determined as a suspected defective sample by the total inspection module in the first area; and a controller processing each data obtained from the total inspection module and the precision inspection module, and detecting a defective sample in the first area, wherein the precision inspection module may include an emitter emitting terahertz wave to the first area, a guide wire guiding an irradiation direction of the terahertz wave, and a vibration unit vibrating the guide wire.

Specimen inspection device and specimen inspection method

A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced. Furthermore, when the refractive indexes of the materials forming the respective layers are not known, the refractive indexes of the respective layers can be measured through differences in transmission times and reflection times of terahertz waves with respect to the respective layers of the specimen, and at the same time, the thicknesses of the respective layers can be measured through differences in transmission times or reflection times of terahertz waves with respect to the respective layers of the specimen, so that the thickness of various specimens can be measured. As such, the present invention has a wide range of applications.

Device for measuring thickness of specimen and method for measuring thickness of specimen

A thickness measuring device is provided. The thickness measuring device may include a terahertz wave signal processing unit configured to receive a terahertz wave according to at least one mode of a reflection mode and a transmission mode, a refractive index information acquisition unit configured to acquire refractive index information of the thickness measurement sample in consideration of second-time difference information between a first reflected terahertz wave and a second reflected terahertz wave, and a thickness information acquisition unit configured to acquire thickness information of the thickness measurement sample in consideration of the refractive index information.

Thickness measurement apparatus, thickness measurement method, and thickness measurement program

A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.

Semiconductor device and method for fabricating the same

Provided is an arrow, wherein by forming a diameter of a shaft, at a fore end of which a point is combined and at a rear end of which a nock is combined, in such a way that the diameter is reduced going from the fore end to the rear end, a center of weight is shifted toward the fore end so as to increase a hitting ratio of the arrow and a deflection deformation is reduced.

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Seoul, South Korea

Dong Woon Park