Samsung Electronics Co., Ltd.

Dong-Won Jung

Sang-jun Choi

Sang-Gyun Woo

Hyun-Woo Kim

Yool Kang

Sang-Jun Choi

Kwang-sub Yoon

Chun-Geun Park

Young-bum Koh

Si-hyeung Lee

Si-Hyeung Lee

Ki-young Kwon

The compounds are of a class of photosensitive polymers for use in chemically amplified photoresists. These photoresists produce sharp line patterns when exposed with an ArF excimer laser. The polymer composition includes a copolymer and the photoresist composition includes a terpolymer with a photo acid generator. The resulting chemically amplified photoresist compositions have strong resistance to dry etching, possess excellent adhesion to film material, and are capable of being developed using conventional developers.

Photosensitive polymers and chemically amplified photoresist compositions using the same

A photosensitive polymer represented by the following formula, and a resist composition including (a) a photosensitive polymer represented by the following formula:

Photosensitive polymer having cyclic backbone and resist composition comprising the same

Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula:

Chemically amplified resist composition

A photosensitive polymer having a cyclic backbone and containing an alicyclic compound and a resist composition obtained therefrom are provided. The photosensitive polymer has a weight-average molecular weight of between about 3,000-100,000 and represented by the following formula:

Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof, R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; M and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5. Also, a resist composition for use in a chemically amplified resist, which comprises a photoacid generator and a polymer having the formula: ##STR2## wherein x is selected from the group consisting of C.sub.5 to C.sub.8 cyclic or alicyclic composition, R.sub.7 is selected from the group consisting of hydrogen and methyl; R.sub.4 is selected from the group consisting of t-butyl, tetrahydropyranyl and adamantyl; m and n are each integers; and the ratio n/(m+n) ranges from about 0.1 to about 0.5.

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Seoul, South Korea

Dong-Won Jung