Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Dong-Won Hwang

Seung-Ki Chae

Pil-Kwon Jun

Hun-Jung Yi

Jung-Dae Park

Kwang-Shin Lim

Yang-Koo Lee

Kook-Joo Kim

Jung-In La

In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Composition for etching silicon oxide and method of forming a contact hole using the same

An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Etching solution for silicon oxide method of manufacturing a semiconductor device using the same

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Gyeonggi-do, South Korea

Dong-Won Hwang