Samsung Electronics Co., Ltd.

Ajou University Industry-academic Cooperation Foundation

Other

S-precious Catalysts Inc.

Dong Sik Park

Bun Yeoul Lee

Jong Yeob Jeon

Ji Hoon Chang

Soo Ho Shin

Hyeon Woo Jang

Jong Min Lee

Joon Yong Choe

Young Sin Kim

Seok Hyun Kim

The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device includes a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Semiconductor memory device with buried contacts and a fence

A semiconductor device comprises a substrate comprising a cell region; a cell region isolation film in the substrate and extending along an outer edge of the cell region; a bit-line structure on the substrate and in the cell region, wherein the bit-line structure has a distal end positioned on the cell region isolation film; a cell spacer on a vertical side surface of the distal end of the bit-line structure; an etching stopper film extending along a side surface of the cell spacer and a top face of the cell region isolation film; and an interlayer insulating film on the etching stopper film, and on the side surface of the cell spacer, wherein the interlayer insulating film includes silicon nitride.

Semiconductor device with bit-line structure over cell region isolation film

The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Disclosed herein are a chromium compound represented by Formula 1a or 1c and a catalyst system including the same, exhibiting superior catalytic activity in an olefin trimerization reaction:[{CH(CH)CH(CHCH)CO}Cr(OH)]&#x2003;&#x2003;[Formula 1a][{CH(CH)CH(CHCH)CO}Cr(OH)].2HO.&#x2003;&#x2003;[Formula 1c]

Chromium compound, catalyst system including the same, and method for trimerizing ethylene using the catalyst system

Provided in one embodiment of the present invention is a photovoltaic the lighting system comprising: an MPPT circuit unit for controlling a battery charging voltage by calculating the maximum power point of electrical energy generated from a photovoltaic panel; a battery charging unit for charging and discharging, in a battery, the electrical energy controlled by the MPPT circuit unit; a lighting unit in which a plurality of LEDs are combined; a lighting driver for turning on or off the lighting unit by supplying power supplied from the battery; and an integrated control board including a microprocessor, which checks a residual quantity of the battery, overcharging of the battery, a discharge quantity, a discharge time, and a lighting state and brightness of the lighting unit through the MPPT circuit unit, the battery charging unit, and the lighting driver so as to diagnose an error and perform integrated control.

Photovoltaic lighting system having integrated control board, and monitoring system using same

Disclosed herein are a chromium compound represented by Formula 1a or 1b and a catalyst system including the same, exhibiting superior catalytic activity in an olefin trimerization reaction:[{CH(CH)CH(CHCH)CO}Cr(OH)]&#x2003;&#x2003;[Formula 1a][{CHCHCH(CHCH)CO}Cr(OH)].&#x2003;&#x2003;[Formula 1b]

Growing community of inventors

Suwon-si, South Korea

Dong Sik Park