Tokyo Electron Limited

Dong-Kyun Choi

Kazuhide Hasebe

Shigeru Nakajima

Yuichiro Morozumi

Tomonori Fujiwara

Katsushige Harada

Haruhiko Furuya

Yoshitaka Tsunashima

Seiji Inumiya

Atsushi Endo

Takuya Sugawara

Genji Nakamura

Hiroaki Ikegawa

Takahito Umehara

Kazuo Yabe

Hirotake Fujita

Daisuke Nozu

After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850&#xb0; C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.

Method for cleaning reaction container and film deposition system

A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

Film formation apparatus and method of using the same

In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

Method of manufacturing semiconductor device, film-forming apparatus, and storage medium

In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.

Film forming method for depositing a plurality of high-k dielectric films

Disclosed is an MOCVD method of forming a tantalum oxide film. First, water vapor used as an oxidizing agent is supplied into a process container to cause moisture to be adsorbed on a surface of each semiconductor wafer. Then, PET gas used as a raw material gas is supplied into the process container and is caused to react with the moisture on the wafer at a process temperature of 200&deg; C., thereby forming an interface layer of tantalum oxide. Then, PET gas and oxygen gas are supplied into the process container at the same time, and are caused to react with each other at a process temperature of 410&deg; C., thereby forming a main layer of tantalum oxide on the interface layer.

MOCVD method of tantalum oxide film

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Dong-Kyun Choi