Korea University Research and Business Foundation

Korea University Industrial Academic Collaboration Foundation

Dong-Jin Byun

Bum-Joon Kim

Jung-Geun Jhin

Jong-Hyeob Baek

Sang-il Kim

Sam-Seok Jang

Do-Han Lee

Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

Method for removing photoresist pattern

A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cmto 5E18 ions/cmor less and an ion implantation energy of 30&#x2dc;50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.

Method of forming nitride semiconductor and electronic device comprising the same

Growing community of inventors

Seoul, South Korea

Dong-Jin Byun