Samsung Sdi Co., Inc.

Samsung Electro-mechanics Co., Ltd.

Cheil Industries Inc.

Dong Hun Kang

Tae Wan Kim

Jong Il Noh

Jeong Hwan Jeong

Jung Min Choi

Chang Ki Hong

Young Nam Choi

Go Un Kim

Yong Sik Yoo

Jong Won Lee

Young Chul Jung

Yong Soon Park

Hyeong Mook Kim

Yong Kuk Kim

Haruki Nojo

Joung Suk Lee

Keun Sam Jang

A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,

CMP slurry composition for copper films and method of polishing copper films using the same

The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Organic film CMP slurry composition and polishing method using same

The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.

CMP slurry composition for polishing copper line and polishing method using same

The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.

CMP slurry composition for organic film and polishing method using same

Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

CMP slurry composition for polishing copper and polishing method using the same

There are provided an insulating film, a printed circuit board including the insulating film, and a method of manufacturing the printed circuit board. The insulating film includes a first insulating material; a second insulating material; and a metal thin film disposed between the first insulating material and the second insulating material.

Insulating film, printed circuit board using the same, and method of manufacturing the printed circuit board

The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.

Growing community of inventors

Uiwang-si, South Korea

Dong Hun Kang