Samsung Electronics Co., Ltd.

Dong Hoon Khang

Sug Hyun Sung

Min Hwan Jeon

Chong Kwang Chang

A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

Growing community of inventors

Hwaseong-si, South Korea

Dong Hoon Khang