Lg Innotek Co., Ltd.

Sungkyunkwan University

Dong Geun Shin

Byung Sook Kim

Jung Eun Han

Chang Hyun Son

Kyoung Seok Min

Bum Sup Kim

Seo Yong Ha

A method of fabricating silicon carbide powder according to the first embodiment includes preparing a silicon carbide molded member by molding a silicon carbide material; preparing a silicon carbide agglomerate member by pulverizing the silicon carbide molded member; and preparing the silicon carbide powder by heat-treating the silicon carbide agglomerate member. A method of fabricating silicon carbide powder according to the second embodiment includes preparing a primary material having a first grain size and including silicon carbide; preparing a secondary material having a second grain size by agglomerating the primary material; and preparing the silicon carbide powder by heat-treating the secondary material.

Method of fabricating silicon carbide powder

A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Silicon carbide powder, method for manufacturing the same and method for growing single crystal

A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

Silicon carbide powder, method for manufacturing the same and silicon carbide sintered body, method for manufacturing the same

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.

Apparatus for fabricating ingot

An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.

Apparatus for fabricating silicon carbide single crystal ingot and method for fabricating ingot

Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a &#x3b2;-type crystal phase and a grain size in a range of about 5 &#x3bc;m to about 100 &#x3bc;m.

Silicon carbide powder and method for manufacturing the same

A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 &#x3bc;m and less than 45 &#x3bc;m with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 &#x3bc;m and less than 75 &#x3bc;m with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 &#x3bc;m and less than 110 &#x3bc;m with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

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Seoul, South Korea

Dong Geun Shin