Hynix Semiconductor Inc.

Dong-Duk Lee

Sung-Kwon Lee

Jin-Woong Kim

Jin-Ki Jung

Jun-Hyeub Sun

Yun-Seok Cho

Kwang-Ok Kim

Seung-Chan Moon

Gyu-Han Yoon

Disclosed is a method for fabricating a semiconductor device. The method includes: forming a first inter-layer insulation layer on a substrate provided with a plurality of cell contact plugs; selectively etching the first inter-layer insulation layer to form a plurality of first contact holes; performing a cleaning process to remove etch residues on lower portions of the first contact holes; forming insulating fences on inner walls of the first contact holes; forming a plurality of bit lines in contact with a group of the cell contact plugs through the respective first contact holes; forming a second inter-layer insulation layer over the plurality of bit lines; planarizing the second inter-layer insulation layer until an upper portion of each of the bit lines is exposed; and selectively etching the second inter-layer insulation layer in alignment with the bit lines, thereby obtaining a plurality of second contact holes.

Method for fabricating semiconductor device

The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHFgas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.

Method for fabricating semiconductor device using tungsten as sacrificial hard mask

Growing community of inventors

Kyoungki-do, South Korea

Dong-Duk Lee