International Business Machines Corporation

Donald Walter Rakowski

Toshiharu Furukawa

David V Horak

Steven J Holmes

Mark Charles Hakey

William H-l Ma

Nicholas Mone, Jr

Patricia McGuiness Marmillion

Richard S Ray

Lawrence Alfred Clevenger

Cyril Cabral, Jr

James Albert Slinkman

Randy William Mann

William H Ma

James M Harper

Glen L Miles

Francois M d'Heurle

Howard Ted Barrett

Nicole Susan Carpenter

Edward D Adams

Edward P Lowe, Jr

Gary Michael Prescott

Robert E Fields

Methods are provided that use disposable and permanent films to dope underlying layers through diffusion. Additionally, methods are provided that use disposable films during implantation doping and that provide a surface from which to dope underlying materials. Some of these disposable films can be created from a traditionally non-disposable film and made disposable. In this manner, solvents may be used that do not etch underlying layers of silicon-based materials. Preferably, deep implantation is performed to form source/drain regions, then an anneal step is performed to activate the dopants. A conformal layer is deposited and implanted with dopants. One or more anneal steps are performed to create very shallow extensions in the source/drain regions.

Methods using disposable and permanent films for diffusion and implantation doping

An apparatus for the in-situ detection of ions in a beam of an ion implanter device includes a mass spectrometer device having inner and outer walls and, a system for generating and directing an ion implant beam through the mass spectrometer device. The mass spectrometer device generates a magnetic field for directing ions of the ion implant beam of a desirable type through an aperture for implanting into a semiconductor wafer, and causing ions of undesirable type to collide with the inner or outer wall. For in-situ detection, a detector device is disposed on the inner and outer walls of the mass spectrometer for detecting the undesirable type of ions deflected. In one embodiment, the detector device comprises electronic sensor devices for detecting a concentration of the undesirable type ions which comprise undesirable elements and compounds. In another embodiment, the detector device comprises Faraday cup devices for detecting a concentration of ions of the undesirable type, or, may comprise a moving Faraday device positioned along tracks disposed respectively along the inner and outer wall, the Faraday being driven for reciprocal movement along a respective track. Data is collected from the sensors corresponding to the positions of undesirable ion detection and is processed, in real-time, during wafer processing. In this manner potential contaminants in the ion implant beam may be determined and corrective action may be taken in response.

Ion implanter in-situ mass spectrometer

The operating lifetime of a hot cathode discharge ion source is extended by introducing nitrogen into an ion implantation apparatus after introduction of an ion implantation gas, such as GeF , is stopped. The nitrogen is preferably introduced along with the GeF during implantation as well.

Method to reduce downtime while implanting GeF4

A method for selectively heating a substrate without damaging surrounding regions of the substrate. In particular, the invention provides for a method of selectively activating doped regions of a semiconductor device without damaging surrounding doped and activated regions. Specifically, the invention provides a laser anneal which activates locally doped regions, while surrounding doped and activated regions are protected using a reflective mask.

Micro heating of selective regions

Method using disposable and permanent films for diffusion and implant doping

A method for introducing dopants into a semiconductor device using doped germanium oxide is disclosed. The method includes using rapid thermal anneal (RTA) or furnace anneal to diffuse dopants into a substrate from a doped germanium oxide sacrificial layer on the semiconductor substrate. After annealing to diffuse the dopants into the substrate, the germanium oxide sacrificial layers is removed using water thereby avoiding removal of silicon dioxide (SiO,) in the gates or in standard device isolation structures, that may lead to device failure. N&plus; and p&plus; sources and drains can be formed in appropriate wells in a semiconductor substrate, using a singular anneal and without the need to define more than one region of the first doped sacrificial layer. Alternatively, annealing before introducing a second dopant into the germanium oxide sacrificial layer give slower diffusing ions such as arsenic a head start.

Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer

The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10.sup.17 atoms/cm.sup.3. The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700.degree. C., and more preferably between about 600.degree.-700.degree. C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900.degree. C.

Method for lowering the phase transformation temperature of a metal

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Milton, VT, United States of America

Donald Walter Rakowski