Axcelis Technologies, Inc.

Aventa Technologies, Inc.

Donald N Polner

Geoffrey Ryding

Theodore H Smick

Marvin Farley

Takao Sakase

Edward Eisner

Piero Sferlazzo

Brian S Freer

Jun Lu

Edward K McIntyre

Ronald Horner

Paul Eide

Darren M Simonelli

David Bernhardt

Jerry Negrotti

Hans J Rutishauser

Donovan Beckel

Mark Lambert

James S Castantini

Kevin R Verrier

Paul A Loomis

Erin Madden

Gerald L Dionne

Tent-Chao D Tao

Donald E DeLuca

An airflow management system and/or method used in particle abatement in semiconductor manufacturing equipment. In particular, the apparatus disclosed is capable of creating and managing a carefully controlled particle free environment for the handling of semiconductor wafers or similar articles. The apparatus is particularly suited to be used as an interface between an equipment front end module (EFEM) and a vacuum loadlock chamber or other such article of process equipment. The apparatus also enables relative motion between enclosures while maintaining a particle free environment utilizing a moving air diffuser mounted to an interface panel.

Airflow management for particle abatement in semiconductor manufacturing equipment

Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.

Cooling apparatus for a web deposition system

An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.

Ion beam angle calibration and emittance measurement system for ribbon beams

Method and apparatus for use in setting up workpiece treatment or processing equipment. A disclosed system processes silicon wafers that are treated during processing steps in producing semiconductor integrated circuits. The processing equipment includes a wafer support that supports a wafer in a treatment region during wafer processing. A housing provides a controlled environment within the housing interior for processing the wafer on the wafer support. A mechanical transfer system transports wafers to and from the support. A wafer simulator is used to simulate wafer movement and includes a pressure sensor for monitoring contact between the simulator and the wafer transfer and support equipment. In one illustrated embodiment the wafer simulator is generally circular and includes three equally spaced pressure sensors for monitoring contact with wafer transport and support equipment.

Workpiece handling alignment system

A variable aperture assembly (,) is provided for controlling the amount of ion beam current passing therethrough in an ion implantation system (,). The aperture assembly (,) comprises an aperture (,) defined by opposing first and second aperture plates (,A,,B) through which an ion beam passes; control arms (,A,,B) connected, respectively, to the first and second aperture plates (,A,,B); and an aperture drive mechanism (,) for simultaneously imparting movement to the control arms in opposite directions, to adjust a gap (,) between the aperture plates (,A,,B) to thereby control the amount of current passing through the aperture (,). Each of the opposite directions in which the control arms move is generally perpendicular to an axis along which the ion beam passes. A control system (,) is also provided for automatically adjusting the aperture gap (,) based on inputs representing actual ion beam current passing through the implanter, desired ion beam current, and aperture position. The control system (,) includes control logic (,) for receiving the inputs and outputting control signals (,) to the aperture drive mechanism to adjust the aperture gap.

Continuously variable aperture for high-energy ion implanter

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Marblehead, MA, United States of America

Donald N Polner