International Business Machines Corporation

Applied Materials, Inc.

Donald J Delehanty

Laertis Economikos

Kenneth John McCullough

Uldis Artis Ziemins

Fen Fen Jamin

Raymond M Khoury

Jose M Ocasio

Daniel M Heenan

John Michael Cotte

Wayne Martin Moreau

Richard Paul Volant

David Lee Rath

John Patrick Simons

Charles Jesse Taft

Gopalakrishna B Prabhu

Rangarajan Jagannathan

Joseph F Salfelder

James Hannah

George F Ouimet, Jr

Bryan N Rhoads

Donna Diane Miura

Frank J Schmidt, Jr

Wayne R Swart

Srinivas R Mirmira

Joseph M Danza

Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.

Planarization system and method using a carbonate containing fluid

A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.

Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers

An improvement is disclosed in a brush cleaning apparatus for cleaning a major surface of a wafer and including wafer guide wheels for transporting the wafer. The improvement includes a polish pad material disposed on a circumference of the guide wheels. The polish pad material is a material used in chemical-mechanical polishing of the wafer. The polish pad material contacts an edge portion of the wafer during cleaning thereof, thereby removing contaminants from the edge portion of the wafer, so that edge cleaning is performed in situ in addition to the brush cleaning of the major surface of the wafer.

Wafer edge cleaning utilizing polish pad material

A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical, carbon dioxide and a co-solvent, and a surfactant.

Process for removing chemical mechanical polishing residual slurry

An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone is effective in removing polymer residue from a substrate, and especially from an integrated circuit chip having aluminum lines thereon.

Etching composition and use thereof

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Wappingers Falls, NY, United States of America

Donald J Delehanty