Intel Corporation

Donald D Danielson

Robert J Gleixner

Patrick M Paluda

Rajan Naik

Tzeun-luh Huang

Dawn L Scovell

Keith Willis

Ebrahim Andideh

Kenneth C Cadien

Lawrence D Wong

Allen Daniel Feller

Stanford Miller

Sarah Bowen

A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350&#xb0; C.

Wirebond structure and method to connect to a microelectronic die

The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead

A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350&deg; C.

The invention provides a method of forming a conductive structure on an integrated circuit substrate. A metal bump, of a first material, is structured on the substrate so that the metal bump electrically contacts a metal part on the substrate. A protective layer is formed on the metal bump. The first material has a first conductivity. The protective layer is of a second material which has a second conductivity which is more than the first conductivity.

Method of forming a protective conductive structure on an integrated circuit package interconnection

A method for modifying the hydrophobicity of the surface of a carbon-doped oxide film is disclosed. Carbon-doped oxide films have exhibited a high hydrophobic nature which inhibits effective cleaning of its surface by conventional techniques. The present invention uses a surface treatment comprising a solution of sulfuric acid and hydrogen peroxide in water to alter the hydrophobicity of the carbon-doped oxide. After treatment by the sulfuric acid and hydrogen peroxide solution, the surface of the carbon-doped oxide becomes hydrophilic. Moreover, the modification of the carbon-doped oxide only occurs at the surface. Therefore, the low k dielectric characteristics of the carbon-doped oxide are retained.

Enhanced surface modification of low K carbon-doped oxide

A method and apparatus for mixing and delivering a slurry polishing and etching a semiconductor device is described wherein the slurry chemicals are mixed at the point of use. An abrasive solution and a oxidant solution are stored in separate storage containers. When the polish/etch is to begin, each of the chemicals are pumped into a mixing chamber where they are mixed so as to form a slurry. The slurry is then immediately used to polish/etch a semiconductor device. Other chemicals may be added to the slurry during the polish/etch process so as to change the polish and/or the etch rate during the polish/etch process.

Chemical mechanical polishing slurry delivery and mixing system

An electrochemical process for removing deposited tungsten from metal parts is described. The electrolyte solution is a basic solution containing a polydentate ligand. The solution is typically comprised of water, ammonium or alkali base, and a chelating or sequestering agent. The parts to be cleaned are biased anodically. The cathodes are preferably constructed of nickel. As hydroxide tungsten complexes and chelated tungsten complexes are formed, oxidation and dissolution of the deposited tungsten is promoted. The oxides form a thin layer on the metal parts, thus protecting the underlying metal part from the electrochemical reaction itself. Once the oxides are formed, that is, once the reaction has reached an end, the parts are removed. The oxides are wiped off, leaving a metal part surface with a high luster, thus improving the performance of the deposition equipment parts.

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Aloha, OR, United States of America

Donald D Danielson