Alchimer

Aveni

Dominique Suhr

Vincent Mevellec

Laurianne Religieux

José Gonzalez

Mikailou Thiam

Paul Blondeau

Louis Caillard

Jose Gonzalez

The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5.

Process for electrodeposition of cobalt

The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2'-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.

Electrolyte and process for electroplating copper onto a barrier layer

The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.

Copper electrodeposition bath containing an electrochemically inert cation

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

Method for forming a metal silicide using a solution containing gold ions and fluorine ions

The invention proposes a method for forming a vertical electrical connection () in a layered semiconductor structure (), comprising the following steps: &#x2014;providing () a layered semiconductor structure (), said layered semiconductor structure () comprising: &#x2014;a support substrate () including an first surface () and a second surface (), &#x2014;an insulating layer () overlying the first surface () of the support substrate (), and &#x2014;at least one device structure () formed in the insulating layer (); and &#x2014;drilling () a via () from the second surface of the support substrate () up to the device structure (), in order to expose the device structure (); characterized in that drilling () of the insulating layer is at least performed by wet etching ().

Method for forming a vertical electrical connection in a layered semiconductor structure

The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method

A solution and a process are used for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. The composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; and C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. The solution and process may be applied for the manufacture of electronic devices such as integrated circuits, especially in three dimensions.

Solution and process for activating the surface of a semiconductor substrate

The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. According to the invention, this composition contains:

Solution and method for activating the oxidized surface of a semiconductor substrate

The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. According to the invention, this method comprises:

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Chatenay Malabry, France

Dominique Suhr