Samsung Electronics Co., Ltd.

Dohyun Go

Jungtaek Kim

Ryong Ha

Sanggil Lee

Dongsuk Shin

Seokhoon Kim

Pankwi Park

Yang Xu

Namkyu Cho

Moon Seung Yang

Seojin Jeong

A semiconductor device includes a substrate that includes an active pattern, a channel pattern disposed on the active pattern, where the channel pattern includes a plurality of semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, and a gate electrode disposed on the semiconductor patterns. The gate electrode includes a plurality of portions that are respectively interposed between the semiconductor patterns, and the source/drain pattern includes a buffer layer in contact with the semiconductor patterns and a main layer disposed on the buffer layer. The buffer layer contains silicon germanium (SiGe) and includes a first semiconductor layer and a first reflow layer thereon. A germanium concentration of the first reflow layer is less than that of the first semiconductor layer.

Semiconductor device including reflow layers

A semiconductor device includes a semiconductor active region having a vertical stack of multiple spaced-apart semiconductor channel regions thereon. A gate electrode extends on the active region and between the spaced-apart channel regions. A source/drain region contacts the spaced-apart channel regions. The source/drain region includes a stack of at least first, second and third epitaxial layers having different electrical characteristics. The first epitaxial layer contacts the active region and each of the spaced-apart channel regions. The second epitaxial layer contacts a first portion of an upper surface of the first epitaxial layer. The third epitaxial layer contacts a second portion of the upper surface of the first epitaxial layer. Each of the first, second and third epitaxial layers includes silicon germanium (SiGe) with unequal levels of germanium (Ge) therein. A level of germanium in the third epitaxial layer exceeds a level of germanium in the second epitaxial layer, which exceeds a level of germanium in the first epitaxial layer.

Multi-channel field effect transistors with enhanced multi-layered source/drain regions

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Suwon-si, South Korea

Dohyun Go