Cheil Industries Inc.

Cheil Industrial, Inc.

Do Hyeon Kim

Dong Seon Uh

Jong Seob Kim

Chang Il Oh

Hui Chan Yun

Irina Nam

Jin Kuk Lee

Mi Young Kim

Sang Kyun Kim

Sang Ran Koh

Ji Young Jung

Sang Jo Lim

Jae Min Oh

Sang Hak Lim

Dong Sun Uh

A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6:  In Formula 6, R is methyl or ethyl, R' is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4&#x2266;x&#x2266;4, 0&#x2266;y&#x2266;3.6, and 4&#xd7;10&#x2266;z&#x2266;1, and n is from about 3 to about 500.

Hardmask composition and associated methods

A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A:(SiO&#x2014;Y&#x2014;SiO)(RSiO)&#x2003;&#x2003;(A)

Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1  Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Hardmask compositions for resist underlayer films

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided.

Antireflective hardmask composition and methods for using same

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: 

Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include  Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: wherein Rand Rmay each independently be hydrogen, hydroxyl, Calkyl, Caryl, allyl, or halo; Rand Rmay be each independently be hydrogen, a crosslinking functionality, or a chromophore; Rand Rmay each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of Rand Ris an alkoxysilane; wherein R, R, and Rmay each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; Rmay be hydrogen, Calkyl, Caryl, or allyl; and n is a positive integer;

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: wherein

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Kyoungki-do, South Korea

Do Hyeon Kim