Applied Materials, Inc.

Dmitriy Panasyuk

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Bok Hoen Kim

Amit Kumar Bansal

Todd J Egan

Jianhua Zhou

Thomas E Nowak

Xinhai Han

Jian J Chen

Ramprakash Sankarakrishnan

Mohamad A Ayoub

Edward W Budiarto

Nagarajan Rajagopalan

Terrance Y Lee

Zhijun Jiang

Michael Wenyoung Tsiang

Jeongmin Lee

Patrick Reilly

Masaki Ogata

Heung Lak Park

Shahid Shaikh

Sergey Starik

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD process

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD apparatus and process

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Dmitriy Panasyuk