Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Pmdtechnologies Ag

Dirk Offenberg

Ines Uhlig

Henning Feick

Stefano Parascandola

Dirk Meinhold

Klemens Pruegl

Hermann Gruber

Uwe Hoeckele

Emanuele Bruno Bodini

Felix Braun

Thoralf Kautzsch

Hanno Melzner

Thomas Bever

Jens Prima

Matthias Franke

Robert Roessler

Matthias Goldbach

Michael Bernhard Sommer

Mirko Vogt

Hans Taddiken

Anton Steltenpohl

Martin Bartels

Christian Kuehn

Johann Alsmeier

Boris Binder

Tobias Mono

Albrecht Kieslich

Kerstin Kaemmer

Jürgen Faul

Thomas Schuster

Norbert Thyssen

Ulrich Frey

Alfred Sigl

Jürgen Amon

Uwe Kahler

Magali Glemet

Stephan Hartmann

Ralf Müller

Dirk Vietzke

Anjo Kirschner

Beatrice Poetschick

Bjoern Sausner

Thomas Schmitz-Huebsch

An image sensor device includes a pixel. The pixel includes a semiconductor layer having a first surface. A photodiode is formed in the semiconductor layer and is configured to generate charge carriers based on light reaching the photodiode. A storage node is formed in the semiconductor layer, the storage node being arranged so that charge carriers generated in the photodiode are transferred to the storage node. A light-shielding structure is formed in the semiconductor layer and is disposed at least between the first surface of the semiconductor layer and the storage node so as to prevent at least part of the light travelling in the semiconductor layer away from the first surface from reaching the storage node.

Image sensor device

A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

Image sensor and device for an image sensor

A device for an image sensor is provided. The device includes a semiconductor device including a photo-sensitive region configured to generate an electric signal based on incident light. Additionally, the device includes an optical element including a first surface for receiving the incident light and a second surface opposite the first surface and turned towards the photo-sensitive region. The first surface and the second surface are tilted by a tilt angle relative to each other so as to modify a direction of propagation of the incident light passing through the optical element towards a center of the photo-sensitive region to compensate for a chief ray angle of the incident light.

Device for an image sensor, image sensor for an optical camera and optical camera

A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

Method for manufacturing a sensor device with a buried deep trench structure and sensor device

An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

Optical sensor device with deep and shallow control electrodes

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Method of manufacturing an imager and imager device

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Controlling of photo-generated charge carriers

An apparatus and a method for producing the apparatus are described, wherein the apparatus includes a substrate with a photodetector and a dielectric arranged on the substrate. Further, the apparatus includes a microlens arranged on a first side of the dielectric. The microlens is configured to steer incident radiation onto the photodetector. Moreover, the apparatus includes a carrier-free optical interference filter. The microlens is arranged between the photodetector and the interference filter, and the interference filter has a plane surface on a side facing away from the photodetector.

Microlens having a carrier-free optical interference filter

An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.

An optical sensor device includes a semiconductor substrate including a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, where the doping region is adjacent to the trench, where the doping region has a doping type different from the read out node, and where the doping region has a doping concentration so that the doping region remains depleted during operation.

Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

An imaging device includes an image sensor circuit including a pixel element. The pixel element is configured to receive during a first receiving time interval electromagnetic waves having a first wavelength, and to receive during a subsequent second receiving time interval electromagnetic waves having a second wavelength. The imaging device includes an image processing circuit configured to produce a color image of the object based on a first pixel image data and a second pixel image data. The first pixel image data is based on the electromagnetic waves having the first wavelength received by the pixel element during the first receiving time interval. The second pixel image data is based on the electromagnetic waves having the second wavelength received by the pixel element during the second receiving time interval.

Imaging device and a method for producing a three-dimensional image of an object

A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

Semiconductor device with an interconnect and a method for manufacturing thereof

Growing community of inventors

Dresden, Germany

Dirk Offenberg