Mosel Vitelic Corporation

Dinos Huang

Tuby Tu

Kuang-Chao Chen

Wen-Doe Su

Kent Liao

Chen Kuang-Chao

Chin-Ta Wu

A process for intermetal SOG/SOP dielectric planarization without having effect is described. First, a silicon-rich oxide (SRO) layer is formed on a substrate surface. Next, a metal layer and an antireflective coating (ARC) layer are sequentially deposited over the SRO layer. The metal layer and ARC layer are then etched to define metal patterns by the conventional lithography and etching techniques. Next, an Ozone-TEOS (O.sub.3 -TEOS) layer and a SOG layer are then formed over the entire substrate surface. Next, the O.sub.3 -TEOS layer and SOG layer are subjected to etching back treatment to obtain a planar substrate surface which only has a small portion of the O.sub.3 -TEOS layer covered on the substrate surface. The etching back treatment can be PEB, TEB or CMP techniques. Finally, a passivation layer is deposited over the remaining of O.sub.3 -TEOS layer.

Process for intermetal SOG/SOP dielectric planarization

The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,

Method for using oxygen plasma treatment on a dielectric layer

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Dinos Huang