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Wacker Siltronic Gesellschaft F&uuml;r Halbleiter Materialien Ag

Dieter Gr&auml;f

R&uuml;diger Schmolke

Reinhard Schauer

Peter Storck

Ulrich Lambert

Wolfgang Siebert

Klaus Messmann

Hans-Adolf Gerber

G&uuml;nther Obermeier

Anton Luger

Robert Kerschreiter

Monique Suhren

Wilfried Von Ammon

Method for the production of an epitaxially grown semiconductor wafer

The invention relates to a reproducible standard for calibrating and checking the bright-field channel of a surface inspection device used for examining the flat surface of a sample and to a method for producing said standard whereby a microstructure is produced on a surface of a substrate provided as a standard, characterized in that the microstructure is smoothed out.

Standard for calibrating and checking a surface inspection device and method for the production thereof

A process for producing a silicon single crystal has the crystal being pulled using the Czochralski method while being doped with oxygen and nitrogen. The single crystal is doped with oxygen at a concentration of less than 6.5*10,atoms cm,and with nitrogen at a concentration of more than 5*10,atoms cm,while the single crystal is being pulled. Another process is for producing a single crystal from a silicon melt, in which the single crystal is doped with nitrogen and the single crystal is pulled at a rate V, an axial temperature gradient G(r) being set up at the interface of the single crystal and the melt, in which the ratio V/G(r) in the radial direction is at least partially less than 1.3*10,cm,min,K,.

Process for producing a single crystal

Growing community of inventors

Burghausen, Germany

Dieter Gräf

Growing community of inventors

Burghausen, Germany

Dieter Gr&auml;f

Dieter Gräf