Carl Zeiss Smt Gmbh

Diana Urich

Dirk Heinrich Ehm

Moritz Becker

Stefan Wiesner

Irene Ament

Eric Eva

Vitaliy Shklover

Stefan-Wolfgang Schmidt

Holger Kierey

Ralf Winter

Christof Jalics

Stefan Wolfgang Schmidt

Robert Meier

A projection exposure apparatus () for semiconductor lithography contains at least one partial volume () that is closed off from the surroundings. The partial volume () contains a gas, from which a plasma can be produced. Conditioning elements () for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Projection exposure system for semiconductor lithography, comprising elements for plasma conditioning

In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element () for EUV lithography is provided, which has a substrate () and a reflective coating () for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer () is arranged between the reflective coating () and the substrate (). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Reflective optical element for EUV lithography

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Munich, Germany

Diana Urich