Stats Chippac Pte. Ltd.

DeokKyung Yang

HeeSoo Lee

HunTeak Lee

In Sang Yoon

DaeSik Choi

Sungsoo Kim

OhHan Kim

Il Kwon Shim

Jae Han Chung

HyungSang Park

Wanil Lee

Yaojian Lin

Byung Joon Han

Jong-Woo Ha

SungWon Cho

KyoungHee Park

Sungmin Song

Hun Teak Lee

A Leam Choi

SeungYong Chai

SeongHun Mun

YeoChan Ko

YongMin Kim

JaeHyuk Choi

KyoWang Koo

HanGil Shin

Kyunghwan Kim

JoHyun Bae

InSang Yoon

YiSu Park

Woonjae Beak

Seung Won Kim

SangDuk Lee

DaeHyeok Ha

Soo-San Park

KyungHoon Lee

Ki Youn Jang

YoungChul Kim

WonJun Ko

SeungYun Ahn

Byoung Wook Jang

JaeHyun Lee

YoungDal Roh

Hyun Joung Kim

Yeongbeom Ko

SangJin Lee

KeoChang Lee

Seong Won Park

SungEun Park

JaeSick Bae

A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

System-in-package with double-sided molding

A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same

A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

Molded laser package with electromagnetic interference shield and method of making

A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

Semiconductor device and method of forming an integrated SiP module with embedded inductor or package

A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

Semiconductor device and method of forming protrusion e-bar for 3D SiP

A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

Method and device for reducing metal burrs when sawing semiconductor packages

An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

Integrated circuit packaging system with shielding and method of manufacture thereof

A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

Semiconductor device and method of forming a 3D interposer system-in-package module

A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A conductive pillar is formed on the first substrate. A first encapsulant is deposited over the first substrate and semiconductor die after forming the conductive pillar. A groove is formed in the first encapsulant around the conductive pillar. A first passive device is disposed over a second substrate. A second encapsulant is deposited over the first passive device and second substrate. The first substrate is mounted over the second substrate. A shielding layer is formed over the second encapsulant. A second passive device can be mounted over the second substrate opposite the first passive device and outside a footprint of the first substrate.

Semiconductor device and method of forming a 3D integrated system-in-package module

Semiconductor device and method of forming an integrated SIP module with embedded inductor or package

Growing community of inventors

Hanam-si, South Korea

DeokKyung Yang