Applied Materials, Inc.

Dennis Rodier

Sony Varghese

Hans-Joachim Ludwig Gossmann

Wei Zou

Stanislav S Todorov

Pradeep Subrahmanyan

Kyuha Shim

Supakit Charnvanichborikarn

Wei Zhao

Richard White

Alexander K Eidukonis

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

Method and apparatus for controlled ion implantation

Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.

Localized stress modulation by implant to back of wafer

Growing community of inventors

Francestown, NH, United States of America

Dennis Rodier