Oerlikon Advanced Technologies Ag

Evatec Advanced Technologies Ag

Dennis Minkoley

Juergen Weichart

Mohamed Elghazzali

Stefan Borja Bammesberger

A method of depositing a metallization structure () comprises depositing a TaN layer () by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate () to form a TaN seed layer (). A Ta layer () is deposited onto the TaN seed layer () by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate () to generate a self-bias field adjacent to the substrate ().

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Chur, Switzerland

Dennis Minkoley