Advanced Energy Industries, Inc.

Other

Kaufman & Robinson, Inc.

Aes Global Holdings Pte Ltd.

Denis M Shaw

Kevin P Fairbairn

Daniel Carter

Gideon Van Zyl

Victor Brouk

Myeong Yeol Choi

Jeffrey Roberg

Steve Jordan

Mike Mueller

Vijayen S Veerasamy

Henry A Luten

Harold R Kaufman

Steven J Geissler

James R Kahn

Fernando Gustavo Tomasel

Andrew Shabalin

Juan Jose Gonzalez

Justin Mauck

Holger Philipp Kley

Maximo Frati

Suryan Emani

Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.

Synchronization of plasma processing components

Synchronization of bias supplies

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Spatial control of plasma processing environments

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Control of plasma sheath with bias supplies

This disclosure describes systems, methods, and apparatus for identifying and compensating for variances between match networks. Each match network can be calibrated at the factory against a golden load and a reference load to turn a generalized model of the match network into an operation model. The operation model can be stored with the match network or shipped with the match network, and used by an operator to determine a correction factor during processing. This correction factor can be used to adjust a generator setpoint, frequency, or aspects of the match network.

Match efficiency-variation compensation

Spatial monitoring and control of plasma processing environments

Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

Synchronization between an excitation source and a substrate bias supply

Application of modulating supplies in a plasma processing system

Plasma processing systems and methods are disclosed. The method may include modulating plasma properties with a modulating supply where the modulation of the plasma properties has a repetition period, T. A waveform with the repetition period T is characterized to produce a waveform dataset, which includes at least one of information about the modulation of the plasma or a desired waveform of a piece of equipment connected to the plasma processing system. The waveform dataset is sent to at least one piece of equipment connected to the plasma system and a synchronization signal is sent with a synchronization signal repetition period that is an integer multiple of T to the at least one piece of equipment connected to the plasma system.

Control of plasma processing systems that include plasma modulating supplies

Plasma processing systems and methods are disclosed. The method includes generating and sustaining a plasma in a plasma chamber and producing a surface potential on a surface of a workpiece in the plasma chamber by applying, with a bias supply, an output waveform to a bias electrode within the plasma chamber where the output waveform has a repetition period, T. A waveform dataset is produced to represent the output waveform of the bias supply during the repetition period, T, and the waveform dataset is sent to one or more other pieces of equipment connected to the plasma chamber. A synchronization pulse with a synchronization-pulse-repetition-period is sent to the one or more other pieces of equipment connected to the plasma chamber to enable synchronization among the one or more other pieces of equipment.

Synchronization with a bias supply in a plasma processing system

Spatial and temporal control of ion bias voltage for plasma processing

Growing community of inventors

Ft. Collins, CO, United States of America

Denis M Shaw