Vlsi Technology, Inc.

Philips Electronics Ltd

Delbert H Parks

Mark W Haley

Victor Ku

Judy U Galloway

Michela S Love

A method is provided for reducing contact resistances in semiconductors. In the use of fluorocarbon plasmas during high selectively sub-quarter-micron contact hole etching, with the silicon dioxide(SiO )/silicon nitride(Si N )/silicide(TiSi ) layers, polymerization effects have been discovered to be crucial. The process includes using a high etch selective chemistry, to remove SiO first, then switching to another chemistry with high selectivity of Si N -to-TiSi . To obtain good etch selectivity of SiO -to-Si N , fluorocarbon plasmas containing high C/F ratio are employed. This results in the information of reactive unsaturated polymers which stick easily to contact sidewalls and bottoms. Fluorine from the polymer was discovered to severely degrade the etch selectivity of Si N -to-TiSi . Different polymer removing methods to restore etch selectivity of Si N -to-TiSi , are provided which can be applied to any highly selective etching of oxide versus nitride.

Method for reducing semiconductor contact resistance

A method for cleaning bonding pads on a semiconductor device, as disclosed herein, includes treating the bonding pads with a CF and water vapor combination. In the process, the water vapor breaks up and the hydrogen from the water vapor couples to fluorine residue on the bonding pad surface creating a volatile HF vapor. In addition, fluorine from the CF exchanges with the titanium in the metallic polymer residue making the polymer more soluble for the organic strip operation which follows. Next, the resist is ashed and then an organic resist stripper is applied to the bonding pad area, thereby creating a clean bonding pad surface. Thereafter, a reliable bond wire connection can be made to the bonding pad.

Method for cleaning integrated circuit bonding pads

A method is provided for reducing contact resistances in semiconductors. In the use of fluorocarbon plasmas during high selectively sub-quarter-micron contact hole etching, with the silicon dioxide(SiO,)/silicon nitride(Si,N,)/silicide(TiSi,) layers, polymerization effects have been discovered to be crucial. The process includes using a high etch selective chemistry, to remove SiO,first, then switching to another chemistry with high selectivity of Si,N,-to-TiSi,. To obtain good etch selectivity of SiO,-to-Si,N,, fluorocarbon plasmas containing high C/F ratio are employed. This results in the formation of reactive unsaturated polymers which stick easily to contact hole sidewalls and bottoms. Fluorine from the polymer was discovered to severely degrade the etch selectivity of Si,N,-to-TiSi,. Different polymer removing methods to restore etch selectivity of Si,N,-to-TiSi,are provided which can be applied to any highly selective etching of oxide versus nitride.

Methods for reducing semiconductor contact resistance

A testing apparatus including a testing plate can be used to test an electrostatic wafer chuck. A DC potential is supplied so as to produce an electrostatic force. A mechanical force is supplied to the testing plate in order to give an indication of the produced electrostatic force. By examining the DC potential and the produced electrostatic force, an electrostatic wafer chuck can be qualified or rejected before being placed into a wafer processing machine. This reduces the possibility of damage to the wafer or the wafer processing machine.

Technique and apparatus for testing electrostatic chucks

An antifuse structure is formed between two metal contacts in which a thin oxide layer is formed on the first or bottom metal, a shallow via is provided oxide layer and a layer of amorphous silicon is deposited over the thin oxide and into the shallow via without leaving the usual furrows in the amorphous silicon and thereby eliminating the step coverage problems of cusps forming in the subsequently applied second or top metal.

Growing community of inventors

San Antonio, TX, United States of America

Delbert H Parks