Micron Semiconductor, Inc.

Micron Technology Incorporated

Debra K Gould

David J Keller

Er-Xuan Ping

Fred D Fishburn

Casey R Kurth

Hongmei Wang

Lyle D Breiner

Shenlin Chen

Brent A McClure

A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.

Capacitor constructions and methods of forming

A cleaner, selective etch process wherein NF.sub.3 ions and nitrogen ions are employed to bombard a patterned nitride layer disposed superjacent an oxide layer, thereby creating substantially vertical sidewalls, especially useful when etching submicron features.

High selective nitride etch

An etch process wherein halogen ions are employed to bombard a patterned nitride layer thereby creating substantially vertical sidewalls, especially useful when etching submicron features. A process in which NF.sub.3 ions are combined with halogen ions in a reactive ion etcher to etch a patterned layer, followed, in situ, by an overetch of NF.sub.3 ions and an ionized hydrogen halide. An inert gas can be added to further increase the uniformity of the etch.

Method for enhancing etch uniformity useful in etching submicron nitride

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Nampa, ID, United States of America

Debra K Gould