International Business Machines Corporation

Debra Fenzel-Alexander

Ratnam Sooriyakumaran

Robert David Allen

Dirk Pfeiffer

Gregory Breyta

Gregory Michael Wallraff

Phillip Joe Brock

David Robert Medeiros

Richard Anthony DiPietro

Hoa D Truong

Carl Eric Larson

Fluorocarbinol- and/or fluoroacid-functionalized silsesquioxane polymers and copolymers are provided. The polymers are substantially transparent to ultraviolet radiation (UV), i.e., radiation of a wavelength less than 365 nm and are also substantially transparent to deep ultraviolet radiation (DUV), i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in single and bilayer, positive and negative, lithographic photoresist compositions, providing improved sensitivity and resolution. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

Photoresist composition

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formulawhere Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl(CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

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San Jose, CA, United States of America

Debra Fenzel-Alexander