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Advanced Technology Materials, Inc.

Debra A Desrochers

Jeffrey F Roeder

Bryan Clark Hendrix

Frank S Hintermaier

Thomas H Baum

Peter C Van Buskirk

Christine Dehm

Wolfgang Hoenlein

A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(&#x3b2;-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.

Textured Bi-based oxide ceramic films

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450&deg; C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides

Reduced diffusion of excess mobile specie from a metal oxide ceramic is achieved by tailoring the composition an/or deposition parameters. A barrier layer which reacts with the excess mobile specie is provided below the metal oxide ceramic to prevent or reduce the diffusion of the excess mobile specie through the bottom electrode and into the substrate.

Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices

A scavenger layer is provided to prevent the diffusion of an excess mobile specie from a metal oxide ceramic into unwanted parts of a device. The scavenger layer is provided above the metal oxide ceramic. As the excess mobile specie diffuses out of the metal oxide ceramic, it migrates toward the scavenger layer and reacts with it. The reaction consumes the excess mobile specie.

Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450&deg; C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one amide group and is decomposed and deposited at a temperature lower than 450&deg; C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

Low temperature CVD processes for preparing ferroelectric films using Bi amides

A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.

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Brookfield, CT, United States of America

Debra A Desrochers